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1. product profile 1.1 general description the magnetoresistive (mr) sensor with integrated amplifier is designed for angular control applications and brushless dc (bldc) motors with even-numbered pole pairs. it consists of two microchips within one package, an angle sensor and an amplifier integrated circuit (ic). the circuit delivers co sine and sine output signals related to the angle of a rotating magnetic field. the output voltage range is ratiometric related to the supply voltage. the temperature coefficient (tc) of the sensor amplitude can be compensated. a ratiometric output voltage linear to the temperature is delivered. a power-down mode is implemented. 1.2 features and benefits ? high precision sensor for magnetic angle measurement ? single-ended cosine and sine outputs ? ratiometric output voltages ? t amb = ? 40 ? cto+150 ? c ? temperature compensated output signal amplitude ? temperature related ratiometric reference voltage ? power-down mode to enable or disable the device ? single package angle sensor with integrated instrumentation amplifier ? rohs compliant and free of halogen and antimony (dark green compliant) 1.3 applications the KMZ60 angle sensor is dedicated for ro tor position detection for bldc motors. beyond that the KMZ60 is applicable for electronic powe r steering (eps) applications, steering angle measurement, window wiper position detection and general contactless angular measurement (e.g. throttle valves or actuators). the KMZ60 is fully automotive qualified as well as applicable for in dustrial and consumer applications. typical applications: ? bldc motor (e.g. eps) ? window wiper position detection ? steering angle measurement ? general contactless angular measurement (e.g. throttle valves or actuators) ? automotive, industrial and consumer applications KMZ60 angle sensor with integrated amplifier rev. 1 ? 22 november 2011 product data sheet so8
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 2 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 1.4 quick reference data [1] induced voltage from a rotating strong magnetic fi eld may impact the performance but without damage. [2] value calculated only with third and fifth harm onic of the spectrum of output signal amplitude v o(vout1) and v o(vout2) by ideal homogeneous field. [3] between pin v cc and pin gnd, soldered close to the package. [4] operating as sink or source. [5] between pin vout1 and pin v cc or pin gnd and between pin vout2 and pin v cc or pin gnd. 2. pinning information 3. ordering information table 1. quick reference data symbol parameter conditions min typ max unit v cc supply voltage 2.7 - 5.5 v n h magnetic field rotational frequency 0 - 25000 r/min h ext external magnetic field strength [1] 25 - - ka/m ?? angular inaccuracy within a static field [2] ? 0.1 - +0.1 deg c block(ext) external blocking capacitance [3] 100 - - nf r l(o)ext external output load resistance on pin vout1 and pin vout2 [4] 5- ? k? c l(o)ext external output load capacitance [5] 0.5 - 10 nf table 2. pinning pin symbol description simplified outline 1 tcc_en temperature coefficient compensation enable 2 vout1 cosine channel output 3 gnd ground 4 vout2 sine channel output 5 vtemp temperature reference output voltage 6 gnd ground 7v cc supply voltage 8 powerdown_en power-down mode enable 4 5 1 8 table 3. ordering information type number package name description version KMZ60 so8 plastic small outline packa ge; 8 leads; body width 3.9 mm sot96-1
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 3 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 4. functional diagram 5. functional description figure 1 shows the complete circuit consisting of the mr sensor element realized by two interleaved wheatstone bridges for cosine and sine signals. also the supporting functions for control circuit and signal amplification are included. a proportional to absolute temperature (ptat) reference current, a voltage-to-current converter and a current multiplier are generating the reference current which is supply voltage, temperature and resistor dependent. this reference current controls the supply voltage of both sensor bridges to compensate their tc via a supply buffer. for noise and electromagnetic compatibility (emc) suppression lo w-pass filtering of the bri dge supply is implemented. the bridge output voltages are amplified by a constant factor and fed to the rail-to-rail output buffers. the single-ended outputs are capable to drive inputs e.g. of an external analog-to-digital converter (adc) referenced to v cc . for an optimal use of the adc input range the cosine and sine output voltages are tracking ratiometric with the supply voltage. to achieve good signal performance, both sign als are matched in amplitude and phase. the amplifier bandwidth is sufficient for lo w phase delay at maximum specified speed of rotation. pin tcc_en is used to enable t he temperature compensation. two modes are defined. the tc of the mr sensor signal amplitude is largely compensated by the amplifier if pin tcc_en is connected to v cc . the amplified sensor signal, which has a negative tc, is available at the output pins vout1 and vout2 if pin tcc_en is fig 1. functional diagram with sensor bridge 001aan885 r b r 1 r 2 r 3 c 3 functional control broken bond wire detection temperature sensor gnds v cc v cc tcc_en powerdown_en vout1 vout2 vtemp gnd vdds vdds current multiplier u / i ptat ref vcos i tc_comp i ptat i const i = f(v cc , t amb , r 2 ) i t = f(t amb ) i v = f(v cc ) tc comp enable vin1p mr sensor r b vsin gain = 6 gain = 6 gain = 7 gain = 7 buffer vin1n v cc / 2 vin2p vin2n
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 4 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier connected to ground. pin vtemp delivers a temperature dependent output voltage v o(temp) in both cases, which is tracking ratiom etric with the supply voltage. it uses the internal ptat reference and can be left open or connected to ground or preferably to v cc if not used. the pin powerdown_en input swit ches the device into power-down mode and sets the pin vout1 and pin vout2 ou tput to high impedance and disables pin vtemp. it must be connected to ground if not used. an implemented broken bond wire detection for all internal co nnections to the mr sensor is drawing the output voltages v o(vout1) and v o(vout2) to the ground level in case of a failure. both outputs are short-circuit proof. the integrated mr sensor element is a sensitive magnetic field sensor, employing the mr effect of thin film permallo y. the sensor contains two parallel supplied wheatstone bridges, which enclose a sensitive angle of 45 degrees. a rotating magnetic field in the surface parallel to the chip (x-y plane) will deliver two independent sinusoidal output signals, one following a cos(2 ? ) and the second following a sin(2 ? ) function. ? is the mechanical angle between sensor and field direction. the definition of the output signal amplitude v o(vout1) and v o(vout2) and the output offset voltage v offset(vout1) and v offset(vout2) of KMZ60 for a mechanical angle of 360 degrees is shown in figure 2 . (1) offset positive (2) offset negative fig 2. definition of output sign al amplitude and offset voltage 001aan886 0 90 180 270 360 (deg) v o(vout2) v o(vout2) + v offset(vout2) (2) v o(vout1) v o(vout1) + v offset(vout1) (1) 93 % v cc 50 % v cc 7 % v cc v offset(vout1) v offset(vout2)
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 5 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 6. internal circuitry table 4. internal circuits for each pin symbol pin equivalent circuit tcc_en 1 vout1 2 gnd 3 and 6 vout2 4 v cc tcc_en gnd 001aan719 v cc v cc gnd gnd vout1 gnd vout2 100 100 001aan720
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 6 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 7. limiting values vtemp 5 v cc 7 powerdown_en 8 table 4. internal circuits for each pin ?continued symbol pin equivalent circuit vtemp v cc gnd gnd 001aan723 v cc gnd 001aan722 001aan721 v cc powerdown_en gnd table 5. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage ? 0.3 +6 v v i input voltage on pins tcc_en and powerdown_en ? 0.3 v cc +0.3 v v o output voltage on pins vout1, vout2 and vtemp ? 0.3 v cc +0.3 v t amb ambient temperature ? 40 +160 ?c
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 7 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 8. recommended operating conditions 9. characteristics table 6. operating conditions symbol parameter conditions min max unit v cc supply voltage 2.7 5.5 v t amb ambient temperature ? 40 +150 ?c table 7. characteristics t amb =25 ? c; angle accuracies referred to homogeneous excitation magnetic fields of h ext = 25 ka/m directed parallel to mr sensor surface; all voltages are related to ground potential of pin gnd; the signal outputs and offset voltages on pin vout1 and pin vout2 are related to the common mode level of v cc / 2; unless otherwise specified. symbol parameter conditions min typ max unit v cc supply voltage 2.7 - 5.5 v i cc supply current under normal condition dependent on v cc , r l(o)ext and rotation frequency; no short-circuit of outputs 2.0 6.0 10.0 ma power-down mode; v cc on pin powerdown_en; v cc or ground on pin tcc_en --16 ? a i pu pull-up current pin tcc_en to ground ? 5- ? 0.3 ? a i pd pull-down current v cc on pin powerdown_en 0.01 - 3 ? a c block(ext) external blocking capacitance [1] 100 - - nf r sc short-circuit resistance pin tcc_en to v cc or ground - - 10 ? r o output resistance on pin vout1, pin vout2 and pin vtemp 50 - 150 ? on pin vout1 and pin vout2; v cc on pin powerdown_en 500 - - k ? pin vtemp to ground; v cc on pin powerdown_en 35 - 85 k ? r l(o)ext external output load resistance on pin vout1 and pin vout2 [2] 5- ? k? pin vtemp to ground 20 - 100 k ? c l(o)ext external output load capacitance on pin vout1 and pin vout2 [3] 0.5 - 10 nf on pin vtemp 22 33 39 nf v o output voltage on pin vout1 and pin vout2; without signal clipping; r l(o)ext =5k ? 0.07v cc - 0.93v cc v v ol low-level output voltage on pin vout1 and pin vout2; broken bond wire detected; r l(o)ext =5k ? to ground - - 0.05v cc v on pin vout1 and pin vout2; broken bond wire detected; r l(o)ext =5k ? to v cc - - 0.06v cc v
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 8 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier i sc short-circuit current to ground; on pin vout1 and pin vout2 [4] ? 6-- ma to ground; on pin vtemp [4] ? 2-- ma to v cc ; on pin vout1 and pin vout2 [5] --6m a to v cc ; on pin vtemp [5] --2m a c l(i)ext external input load capacitance on pin powerdown_en for electromagnetic interference (emi) reason 100 - - nf v il low-level input voltage on pin powerdown_en - - 0.6 v v ih high-level input voltage on pin powerdown_en v cc ? 0.6 - - v t startup start-up time to 98 % of v o(vout1) or v o(vout2) end level after minimum v cc was reached --110 ? s from power-down to 98 % of v o(vout1) or v o(vout2) end level --1 1 0 ? s h ext external magnetic field strength [6] 25 - - ka/m ? err reference position angle error [7] ? 2-+2deg ? startup start-up angle error t amb = ? 40 ?c; r l(o)ext =5k ?? 10 - +10 deg t amb =25 ?c; r l(o)ext =5k ?? 10 - +10 deg t amb =85 ?c; r l(o)ext =5k ?? 13 - +13 deg t amb =105 ?c; r l(o)ext =5k ?? 14.5 - +14.5 deg t amb =150 ?c; r l(o)ext =5k ?? 19 - +19 deg dynamic characteristics for angular accuracy calculations n h magnetic field rotational frequency 0 - 25000 r/min k amplitude synchronism [8] 98 - 102 % ? err phase error [9] --1 . 5d e g ?? angular inaccuracy within a static field [10] ? 0.1 - +0.1 deg psrr power supply rejection ratio f ripple = 500 khz 12 - - db v n(o)(rms) rms output noise voltage on pin vout1, pin vout2 and pin vtemp; no magnetic signal [11] - - 500 ? v temperature dependency of output on pin vtemp v o output voltage t amb = ? 40 ?c 0.057v cc - 0.147v cc v t amb =25 ?c 0.248v cc - 0.351v cc v t amb =85 ?c 0.445v cc - 0.559v cc v t amb =105 ?c 0.515v cc - 0.631v cc v t amb =150 ?c 0.655v cc - 0.786v cc v table 7. characteristics ?continued t amb =25 ? c; angle accuracies referred to homogeneous excitation magnetic fields of h ext = 25 ka/m directed parallel to mr sensor surface; all voltages are related to ground potential of pin gnd; the signal outputs and offset voltages on pin vout1 and pin vout2 are related to the common mode level of v cc / 2; unless otherwise specified. symbol parameter conditions min typ max unit
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 9 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier temperature dependency of signal outputs with tc compensation (v cc on pin tcc_en) v o output voltage peak-to-peak value; on pin vout1; r l(o)ext =5k ? t amb = ? 40 ?c 0.42v cc 0.56v cc 0.70v cc v t amb =25 ?c 0.46v cc 0.56v cc 0.70v cc v t amb =85 ?c 0.42v cc 0.53v cc 0.70v cc v t amb =105 ?c 0.395v cc 0.51v cc 0.695v cc v t amb =150 ?c 0.35v cc 0.48v cc 0.68v cc v peak-to-peak value; on pin vout2; r l(o)ext =5k ? t amb = ? 40 ?c 0.42v cc 0.56v cc 0.70v cc v t amb =25 ?c 0.46v cc 0.56v cc 0.70v cc v t amb =85 ?c 0.42v cc 0.53v cc 0.70v cc v t amb =105 ?c 0.395v cc 0.51v cc 0.695v cc v t amb =150 ?c 0.35v cc 0.48v cc 0.68v cc v v offset offset voltage on pin vout1; r l(o)ext =5k ? t amb = ? 40 ?c ? 0.08v cc -+0.08v cc v t amb =25 ?c ? 0.08v cc -+0.08v cc v t amb =85 ?c ? 0.09v cc -+0.09v cc v t amb =105 ?c ? 0.095v cc - +0.095v cc v t amb =150 ?c ? 0.11v cc -+0.11v cc v on pin vout2; r l(o)ext =5k ? t amb = ? 40 ?c ? 0.08v cc -+0.08v cc v t amb =25 ?c ? 0.08v cc -+0.08v cc v t amb =85 ?c ? 0.09v cc -+0.09v cc v t amb =105 ?c ? 0.095v cc - +0.095v cc v t amb =150 ?c ? 0.11v cc -+0.11v cc v table 7. characteristics ?continued t amb =25 ? c; angle accuracies referred to homogeneous excitation magnetic fields of h ext = 25 ka/m directed parallel to mr sensor surface; all voltages are related to ground potential of pin gnd; the signal outputs and offset voltages on pin vout1 and pin vout2 are related to the common mode level of v cc / 2; unless otherwise specified. symbol parameter conditions min typ max unit
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 10 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier [1] between pin v cc and pin gnd, soldered close to the package. [2] operating as sink or source. [3] between pin vout1 and pin v cc or pin gnd and between pin vout2 and pin v cc or pin gnd. [4] short-circuit to pin gnd within a time limit of 10 minutes. [5] short-circuit to pin v cc within a time limit of 10 minutes. [6] induced voltage from a rotating strong magnetic field may impact the performance but without damage. [7] angle error due to reference position defined by the leadframe, sample based controlled at assembly line. [8] by calculation of peak-to-peak amplitude relation k = 100 ? v o(vout1) /v o(vout2) . [9] rotation frequency dependent phase error, after offset corr ection, amplitude calibration and arctangent calculation. [10] value calculated only with third and fifth harm onic of the spectrum of output signal amplitude v o(vout1) and v o(vout2) by ideal homogeneous field. [11] maximum limit is valid with exte rnal first order filter of 80 khz. temperature dependency of signal outputs without tc compensation (pin tcc_en to ground) v o output voltage peak-to-peak value; on pin vout1; r l(o)ext =5k ? t amb = ? 40 ?c 0.54v cc 0.66v cc 0.76v cc v t amb =25 ?c 0.41v cc 0.49v cc 0.57v cc v t amb =85 ?c 0.31v cc 0.37v cc 0.45v cc v t amb =105 ?c 0.275v cc 0.34v cc 0.425v cc v t amb =150 ?c 0.21v cc 0.27v cc 0.36v cc v peak-to-peak value; on pin vout2; r l(o)ext =5k ? t amb = ? 40 ?c 0.54v cc 0.66v cc 0.76v cc v t amb =25 ?c 0.41v cc 0.49v cc 0.57v cc v t amb =85 ?c 0.31v cc 0.37v cc 0.45v cc v t amb =105 ?c 0.275v cc 0.34v cc 0.425v cc v t amb =150 ?c 0.21v cc 0.27v cc 0.36v cc v v offset offset voltage on pin vout1; r l(o)ext =5k ? t amb = ? 40 ?c ? 0.07v cc -+0.07v cc v t amb =25 ?c ? 0.07v cc -+0.07v cc v t amb =85 ?c ? 0.07v cc -+0.07v cc v t amb =105 ?c ? 0.075v cc - +0.075v cc v t amb =150 ?c ? 0.08v cc -+0.08v cc v on pin vout2; r l(o)ext =5k ? t amb = ? 40 ?c ? 0.07v cc -+0.07v cc v t amb =25 ?c ? 0.07v cc -+0.07v cc v t amb =85 ?c ? 0.07v cc -+0.07v cc v t amb =105 ?c ? 0.075v cc - +0.075v cc v t amb =150 ?c ? 0.08v cc -+0.08v cc v table 7. characteristics ?continued t amb =25 ? c; angle accuracies referred to homogeneous excitation magnetic fields of h ext = 25 ka/m directed parallel to mr sensor surface; all voltages are related to ground potential of pin gnd; the signal outputs and offset voltages on pin vout1 and pin vout2 are related to the common mode level of v cc / 2; unless otherwise specified. symbol parameter conditions min typ max unit
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 11 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10. definitions of errors 10.1 reference position angle error the reference position angle error ? err is defined as absolute mounting position deviation of the mr sensor in a homogeneous excitati on magnetic field related to the reference position ?? 0 defined by the leadframe. marking position for angle ?? 0 = 0 degree and y = 0 position is referred parallel to the straight connection line of the 2nd and 7th package pin. the x = 0 position is referred to the middle distance of the package top (see figure 3 ). 10.2 output amplitude matching error the output amplitude matching error k is def ined as the relation between both output channel amplitudes at continuously rotati ng magnetic excitation of the mr sensor. k=100 ? v o(vout1) (p-p) / v o(vout2) (p-p) (the angle error can be derived from figure 4 ) fig 3. phase error caused by mounting tolerances 001aan887 sensor die err 0 x y
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 12 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10.3 output signal amplitude the peak-to-peak output signal amplitude of v o(vout1) and v o(vout2) is related to v cc . figure 5 and figure 6 show the specified amplitude range over temperature within its minimum and maximum limits. fig 4. angle error caused by output amplitude synchronism k (%) 98 102 101 99 100 001aan888 0.1 0.2 0.3 err (deg) 0 tc compensation on fig 5. output signal peak-to-peak amplitude with pin tcc_en connected to v cc t amb (c) -40 160 120 40 80 0 001aan889 0.4 0.6 0.8 v o / v cc (v / v) 0.2
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 13 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10.4 tc of output signal amplitude the tc of the peak-to-peak ou tput signal amplitude of v o(vout1) and v o(vout2) is related to v cc . figure 7 and figure 8 show the specified tc range of the amplitude over temperature within its minimum and maximum limits. the limits were calculated from single mr sensor measurements and circuit measurements. tc compensation off fig 6. output signal peak-to-peak amplitude with pin tcc_en connected to ground t amb (c) -40 160 120 40 80 0 001aan890 0.4 0.6 0.8 v o / v cc (v / v) 0.2 tc compensation on fig 7. tc of output signal peak-to-peak amplitude with pin tcc_en connected to v cc t amb (c) -40 160 120 40 80 0 aaa-001506 0 -1 1 2 tc v(o) / v cc (mv / v) / k -2
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 14 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10.5 tc of output signal offset the tc of the output signal offset of v offset(vout1) and v offset(vout2) is related to v cc . figure 9 and figure 10 show the specified tc range of the offset over temperature within its minimum and maximum limits. the limits we re calculated from single mr sensor measurements and circuit measurements. tc compensation off fig 8. tc of output signal peak-to-peak amplitude with pin tcc_en connected to ground t amb (c) -40 160 120 40 80 0 aaa-001507 -2 -3 -1 0 -4 tc v(o) / v cc (mv / v) / k tc compensation on fig 9. tc of output signal offset with pin tcc_en connected to v cc -0.2 0.2 0.6 -0.6 t amb (c) -40 160 120 40 80 0 aaa-001508 tc v(offset) / v cc (mv / v) / k
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 15 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10.6 start-up angle error the start-up angle error is defined as maximu m deviation by calculating the angle from the offset voltages v offset(vout1) and v offset(vout2) and the peak-to-peak signal amplitudes v o(vout1) and v o(vout2) . figure 11 and figure 12 show the maximum start-up angular error related to 180 degree angular range of the mr sensor after one point calibration at 25 ? c (from worst case simulations). tc compensation off fig 10. tc of output signal offset with pin tcc_en connected to ground -0.1 0.1 0.3 -0.3 t amb (c) -40 160 120 40 80 0 aaa-001509 tc v(offset) / v cc (mv / v) / k tc compensation on fig 11. start-up angle error after cali bration with pin tcc_en connected to v cc t amb (c) -40 160 120 40 80 0 001aan891 5 3 1 0 2 4 6 7 start-up error (deg)
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 16 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10.7 phase error the phase error ? err is defined as a rotation frequency dependent error due to bandwidth limitation of the operational amplifiers. v o(vout1) and v o(vout2) are retarded by the device propagation delay, referred to the actual ang le direction of the ro tating magnetic field (see figure 13 ). the typical characteristics value can be used for a 1st order compensation of this error on very high rotations per minute. for low rotational speed systems this error component is negligible. tc compensation off fig 12. start-up angle error after calibration with pin tcc_en connected to ground t amb (c) -40 160 120 40 80 0 001aan892 0.8 1.2 0.4 1.6 2.0 start-up error (deg) 0
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 17 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 10.8 temperature behavior of pin vtemp output the temperature dependent v o(temp) reference voltage with its specified tolerances is shown in figure 14 . the output level is related to ground and tracking ratiometric with v cc . stability is guar anteed at the specified output load. (1) vout1 (2) vout2 fig 13. angle error caused by amplifier bandwidth 001aan893 delay (deg) 50 0 100 150 200 250 300 reference (deg) 350 50 0 100 150 200 250 300 reference (deg) 350 180 120 60 v o / v cc (v / v) err (2) (1) 1 0 -1 0 err
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 18 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 11. electromagnetic compatibility 11.1 emission (iec 61967-4) emc tests carried out according to iec 61967-4, part 4 under typical specification conditions at v cc = 5 v without rotational field excitation. pin tcc_en connected to v cc or ground. direct coupling method: 150 ? , 6.8 nf, frequency band 150 khz to 1 ghz test severity limit: class iii local with level 10-k test ensured on pins: vo ut1, vout2, vtemp, v cc and powerdown_en related to ground with specified load capacitors 11.2 immunity (iec 62132-4) emc tests carried out according to iec 62132-4, under typical specification conditions at v cc = 3.3 v with different constant field orientations. pin tcc_en connected to v cc or ground. direct power injection: 150 ? , 6.8 nf, frequency band 150 khz to 1 ghz test severity limit: 12 dbm test ensured on pins: vo ut1, vout2, vtemp, v cc and powerdown_en related to ground with specified load capacitors the mathematically calculated mechanical angular error can be derived from measured output signals on pin vout1 and pin v out2. it will not deviate more than ? 1.8 degrees during the emc immunity test. the deviation of output voltage v o(temp) is less than 0.009v cc which equals with an additional error less than 2.5 ? c. fig 14. temperature behavior of pin vtemp output t amb (c) -40 160 120 40 80 0 001aan894 0.4 0.2 0.6 0.8 v o(vtemp) / v cc (v / v) 0 max min
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 19 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 12. electrostatic discharge (esd) 12.1 human body model the KMZ60 is protected against 4 kv, according to the human body model at 100 pf and 1.5 k ? . the test is according to aec-q100, rev-g, method 002. 12.2 machine model the KMZ60 is protected against 400 v, according to the machine model. the test is according to aec-q100, rev-g, method 003. 12.3 charged-device model the KMZ60 is protected against 500 v of direct charge injection with the 4 pf verification model, according to the charged-device model. the test is according to aec-q100, rev-g, method 011. 12.4 latch-up protection the KMZ60 is latch-up protected against 110 ma at maximum ambient temperature. the test is according to aec-q100, rev-g, method 004. 13. application information the mr sensor is designed for applications with a separate electronic control unit (ecu) containing an adc with its references connected to the supply voltage. with the adc input resolution related to v cc in the same way as the mr sensor output voltage range (ratiometric), the signal dependency on supply voltage changes is minimized. 13.1 connection to ecu long connections on the pcb should be avoi ded due to the limited driving capability of both amplifier outputs. shielding of the signal lines is recommended. the load capacitors and resistors should be matched for best angular accuracy. fig 15. application diagram of KMZ60 with separate ecu on printed-circuit board (pcb) 001aan895 r l(o)ext r l(o)ext c l(o)ext c l(o)ext r l(o)ext c l(o)ext c l(i)ext c block(ext) pcb pcb with KMZ60 and additional components tcc_en to v cc or gnd filter ecu adc KMZ60 powerdown_en vtemp gnd gnd gnd vout2 vout1 v cc v cc v cc filter
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 20 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier in front of the adc inputs band width limitation filters should be implemented related to the used sampling frequency of the system to reduce the noise bandwidth (see figure 15 ). the load resistors r l(o)ext are representing the input load of the filter application and the adc. the ecu may be used for arctan and offset calculation, offset storage and calibration. 13.2 emi a blocking capacitor c block(ext) and the load capacitors c l(o)ext for the signal outputs are necessary to fulfill the emi requirements. they should be soldered close to the related ic pins. to protect the output stages vout1 and vout2 an internal resistance is implemented. it works like a voltage divider together with the load resistance r l(o)ext . capacitor c l(o)ext is required on pin vtemp for output stability. the pin can be soldered directly to ground or preferably to v cc on the pcb if it is not used. capacitor c l(i)ext is required on pin powerdown_e n to fulfill the emi demands. the pin may be soldered directly to ground on the pcb if it is not used. 13.3 power consumption the power consumption is dependent on v cc , temperature, load resistance r l(o)ext , load capacitance c l(o)ext and frequency of the rotating magnetic field. it is recommended to refer the load resistance r l(o)ext and the load capacitance c l(o)ext to ground although a connection to v cc is likewise possible. v o(temp) is related to ground via the external load resistance r l(o)ext on pin vtemp. the output voltages v o(vout1) , v o(vout2) and v o(temp) are protected against short-circuit to v cc or ground by current limitation within the given time duration. placing the device 180 degrees rotated into the socket may lead to damages, if the supply current is not limited to 100 ma. 13.4 tc compensation KMZ60 can be used as specif ied with tc compensation of the mr sensor signal. pin tcc_en has to be connected to v cc . the pin tcc_en has to be connected to grou nd if no tc compensation is required. the output signal amplitude will decrease with increasing te mperature related to the tc of the mr sensor. the angle accuracy might be slightly reduced due to the limited resolution of the used adc. 13.5 offset of signal outputs on pin vout1 and pin vout2 the single-ended output signals are referenced to v cc / 2 generated internally on chip. offsets are originated from matching inaccuracies of the production process. for a good accuracy matching of the external load is additionally required. for esd and emc protection the outputs are containing a series resistance. the influence of this series resistance is minimized with a large output load resistance.
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 21 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 13.6 temperature reference output on pin vtemp a temperature dependent reference voltage v o(temp) is available. this voltage is derived from an internal ptat reference. for measurement with the proposed adc the voltage is tracking ratiometric with v cc . the reference can be used for a temperature dependent offset and angular error calibration. the output can be left open or connected to ground or preferably to v cc if not used. 13.7 switching into power-down mode the power-down mode can be activate d by switching pin powerdown_en to v cc . within this mode the output pin vout1 and pin vout2 are set to high impedance to avoid current consumption across the load resistors. pin vtemp will be drawn to the ground level via an internal resistance. the power-down mode can be entered if pin tcc_en is connected to v cc or ground. 13.8 circuit behavior in case of broken bond wires the output voltages v o(vout1) and v o(vout2) will be drawn to the ground level if the implemented broken bond wire detection for all internal connections to the mr sensor is activated. with a broken bond wire on pin tcc_en the pad will be drawn internally to v cc . this activates the tc compensation for both signal outputs on pin vout1 and pin vout2. a broken bond wire on pin vtemp will interrupt the output sign al on pin vtemp. a broken bond wire on pin p owerdown_en will disable the power-dow n mode and keep the device active via an internal pull-down. 13.9 signal dependence on air-gap distance KMZ60 measures the direction of the extern al magnetic field within its x-y plane. the result is widely independent of the field st rength as far as it is above the specified minimum value. within a homogeneous field in x- y direction the result is independent of its placement in z direction (air-gap). the nominal z distance of the internal x-y plane to the top surface of the plastic package is 405 ? m. 14. test information 14.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q100 rev-g - failure mechanism ba sed stress test qualification for integrated circuits , and is suitable for use in automotive applications.
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 22 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 15. package information 15.1 sensor reference position definition of angle reference related to the edges of pin 2 and pin 7 is shown in figure 16 . distance of sensor plane related to pl astic top of the package is shown in figure 17 . the nominal distance is 405 ? m (minimum 388 ? m and maximum 415 ? m). distance between mr top surface and package top surface = (package top thickness + downset) ? (die thickness + glue line thickness). 15.2 note the package outline sot96-1 (see figure 18 ) allows a general wide tolerance for the lead frame thickness and the lead width. the actual reference for KMZ60 is: c = 0.203 mm ? 0.008 mm; b p =0.380mm ? 0.020 mm and e value does not vary fig 16. definition of angle reference position fig 17. distance between the mr top surface and the package top surface 001aan792 all leads pin 1 2 max all leads + 0 a a b 0.2 b 0.5 package top thickness 0.650 mm 0.050 mm 0.203 mm 0.008 mm 1.12 mm 0.14 mm die thickness 380 m glue line thickness ~ 20 m downset 0.150 mm 0.025 mm max 0.415 mm nom 0.405 mm min 0.388 mm 001aan705
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 23 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 16. package outline fig 18. package outline sot96-1 (so8) unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz ywv references outline version european projection issue date iec jedec jeita mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. 1.0 0.4 sot96-1 x w m a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 4 5 pin 1 index 1 8 y 076e03 ms-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.05 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale so8: plastic small outline package; 8 leads; body width 3.9 mm sot96-1 99-12-27 03-02-18
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 24 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 17. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 ?surface mount reflow soldering description? . 17.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electr ical circuits. the soldered joint provides both the mechanical and the electrical connection. th ere is no single sold ering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for fine pitch smds. reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 17.2 wave and reflow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased pr obability of bridging. the reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. leaded packages, packages with solder balls, and leadless packages are all reflow solderable. key characteristics in both wave and reflow soldering are: ? board specifications, in cluding the board finish , solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivit y level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 17.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhe sive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath specifications, including temperature and impurities
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 25 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 17.4 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 19 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 8 and 9 moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 19 . table 8. snpb eutectic process (from j-std-020c) package thickness (mm) package reflow temperature ( ?c) volume (mm 3 ) < 350 ? 350 < 2.5 235 220 ? 2.5 220 220 table 9. lead-free process (from j-std-020c) package thickness (mm) package reflow temperature ( ?c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 26 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . 18. abbreviations 19. revision history msl: moisture sensitivity level fig 19. temperature profiles for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 10. abbreviations acronym description adc analog-to-digital converter bldc brushless dc ecu electronic control unit emc electromagnetic compatibility emi electromagnet ic interference eps electronic power steering esd electrostatic discharge ic integrated circuit mr magnetoresistive pcb printed-circuit board ptat proportional to absolute temperature rohs restriction of hazardous substances tc temperature coefficient table 11. revision history document id release date data sheet status change notice supersedes KMZ60 v.1 20111122 product data sheet - -
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 27 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier 20. legal information 20.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 20.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 20.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qua lified for use in automotive applications. unless otherwise agreed in wr iting, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
KMZ60 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 22 november 2011 28 of 29 nxp semiconductors KMZ60 angle sensor with in tegrated amplifier export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. 20.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 21. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors KMZ60 angle sensor with in tegrated amplifier ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 22 november 2011 document identifier: KMZ60 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 22. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 5 functional description . . . . . . . . . . . . . . . . . . . 3 6 internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 5 7 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 recommended operating conditions. . . . . . . . 7 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 definitions of errors. . . . . . . . . . . . . . . . . . . . . 11 10.1 reference position angle error . . . . . . . . . . . . 11 10.2 output amplitude matching error . . . . . . . . . . 11 10.3 output signal amplitude . . . . . . . . . . . . . . . . . 12 10.4 tc of output signal amplitude . . . . . . . . . . . . . 13 10.5 tc of output signal offset . . . . . . . . . . . . . . . . 14 10.6 start-up angle error. . . . . . . . . . . . . . . . . . . . . 15 10.7 phase error . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 10.8 temperature behavior of pin vtemp output. . 17 11 electromagnetic compatibility . . . . . . . . . . . . 18 11.1 emission (iec 61967-4) . . . . . . . . . . . . . . . . . 18 11.2 immunity (iec 62132-4) . . . . . . . . . . . . . . . . . 18 12 electrostatic discharge (esd) . . . . . . . . . . . . 19 12.1 human body model . . . . . . . . . . . . . . . . . . . . 19 12.2 machine model . . . . . . . . . . . . . . . . . . . . . . . . 19 12.3 charged-device model . . . . . . . . . . . . . . . . . . 19 12.4 latch-up protection . . . . . . . . . . . . . . . . . . . . . 19 13 application information. . . . . . . . . . . . . . . . . . 19 13.1 connection to ecu . . . . . . . . . . . . . . . . . . . . . 19 13.2 emi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13.3 power consumption . . . . . . . . . . . . . . . . . . . . 20 13.4 tc compensation . . . . . . . . . . . . . . . . . . . . . . 20 13.5 offset of signal outputs on pin vout1 and pin vout2 . . . . . . . . . . . . . . . . . . . . . . . . 20 13.6 temperature reference output . . . . . . . . . . . . 21 13.7 switching into power-down mode. . . . . . . . . . 21 13.8 circuit behavior in case of broken bond wires 21 13.9 signal dependence on air-gap distance . . . . . 21 14 test information . . . . . . . . . . . . . . . . . . . . . . . . 21 14.1 quality information . . . . . . . . . . . . . . . . . . . . . 21 15 package information . . . . . . . . . . . . . . . . . . . . 22 15.1 sensor reference position. . . . . . . . . . . . . . . . 22 15.2 note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 16 package outline. . . . . . . . . . . . . . . . . . . . . . . . 23 17 soldering of smd packages . . . . . . . . . . . . . . 24 17.1 introduction to soldering. . . . . . . . . . . . . . . . . 24 17.2 wave and reflow soldering. . . . . . . . . . . . . . . 24 17.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . 24 17.4 reflow soldering . . . . . . . . . . . . . . . . . . . . . . 25 18 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 26 19 revision history . . . . . . . . . . . . . . . . . . . . . . . 26 20 legal information . . . . . . . . . . . . . . . . . . . . . . 27 20.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 27 20.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 20.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 27 20.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 28 21 contact information . . . . . . . . . . . . . . . . . . . . 28 22 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

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